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TPH2900ENH

MOSFET

TPH2900ENH
Supply Ability:
20000 /
Quantity:
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Features
  • High-speed switching
  • Small gate charge: QSW = 8.2 nC (typ.)
  • Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ.) (VGS = 10 V)
  • Low leakage current: IDSS = 10 µA (max) (VDS = 200 V)
  • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA)
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