Category
Toshiba
TPN1R603PL
Supply Ability:
20000 /
Quantity:
Features
(1) High-speed switching
(2) Small gate charge: QSW = 11 nC (typ.)
(3) Small output charge: Qoss = 23 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 1.2 mΩ (typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.3 mA)
(1) High-speed switching
(2) Small gate charge: QSW = 11 nC (typ.)
(3) Small output charge: Qoss = 23 nC (typ.)
(4) Low drain-source on-resistance: RDS(ON) = 1.2 mΩ (typ.) (VGS = 10 V)
(5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V)
(6) Enhancement mode: Vth = 1.1 to 2.1 V (VDS = 10 V, ID = 0.3 mA)
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