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TPH1R306PL

Toshiba

TPH1R306PL
Supply Ability:
20000 /
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Features
  • High-speed switching
  • Small gate charge: QSW = 22 nC (typ.)
  • Small output charge: Qoss = 77.5 nC (typ.)
  • Low drain-source on-resistance: RDS(ON) = 1.0 mΩ (typ.) (VGS = 10 V)
  • Low leakage current: IDSS = 10 µA (max) (VDS = 60 V)
  • Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1.0 mA)
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