Category
IGBT Transistors
IKW40N120CS7XKSA1
Supply Ability:
600 /
IGBT Trench Field Stop 1200 V 82 A 357 W Through Hole PG-TO247-3
Quantity:
IKW40N120CS7XKSA1's Application/Function
IKW40N120CS7XKSA1 is an IGBT (Insulated Gate Bipolar Transistor) that is widely used in industrial and automotive applications. This discrete semiconductor product belongs to the category of transistors, IGBTs, and single IGBTs. The IGBT type is Trench Field Stop, which is a type of IGBT technology that makes use of trenches in the semiconductor device's collector region instead of conventional planar structures to enhance the electric field distribution.
The IKW40N120CS7XKSA1 has a maximum voltage of 1200 V, and it can withstand a maximum collector current of 82 A. This IGBT comes with Through Hole PG-TO247-3 packaging, which is a type of package that has three leads and is capable of thermal dissipation.
IKW40N120CS7XKSA1's Performance
The maximum power rating of this IGBT is 357 W, and it has a low on-state voltage drop with a maximum value of 2V at 15V and 40A. This makes it an ideal choice for high-frequency applications that demand low power dissipation and high efficiency.
The switching energy of IKW40N120CS7XKSA1 is 2.55mJ (on) and 1.75mJ (off). It has a gate charge of 230 nC, and the reverse recovery time (trr) is 175 ns. These values indicate that this IGBT is capable of fast switching speeds and low power losses.
The operating temperature range of IKW40N120CS7XKSA1 is from -40°C to 175°C (TJ). This range allows it to operate in harsh industrial conditions where high-temperature fluctuations are common.
Overall, the IKW40N120CS7XKSA1 IGBT is a versatile and high-performance semiconductor device that can be used in a wide range of applications. With its high current rating, low on-state voltage drop, and excellent switching characteristics, it is an ideal choice for demanding power electronics applications in motor drives, uninterruptible power supplies (UPS), induction heating systems, solar inverters, and welding machines, among others.
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